[19a-146-1~12] 15.4 III-V-group nitride crystals

[19a-146-8] Surface Plasmon Enhanced light-emissions from InGaN/GaN Multiple Quantum wells

〇(M1)Fumiya Murao¹, Toshiki Nakamura¹, Matsuyama Tetsuya¹, Wada Kenji¹, Funato Mitsuru², Kawakami Yoichi², Okamoto Koichi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:Plasmon, InGaN, Plasmonics

Surface plasmon (SP) enhanced blue emissions from InGaN/GaN multiple quantum wells (QWs) were performed for 3QWs or 10 QWs with silver or aluminum layers. 8.5-fold and 3.4 fold enhancements was observed taken for 3QWs with Ag and Al, respectively. The enhancement factors were reduced to 4.1-fold and 2.2-fold for 10QWs with Ag and Al, respectively because the penetration depths of SP (16 nm for Ag, 35 nm for Al) were shorter than the depths of 10QW. However, these enhancement factors were rather larger than the theoretical expectations. Elucidating and controlling this factor may enable us to achieve further enhancement factors and deeper penetration depths of SP effects.