The 79th JSAP Autumn Meeting, 2018

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21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 19, 2018 9:30 AM - 11:30 AM 224A (224-1)

Takumi Ikenoue(Kyoto Univ.)

9:45 AM - 10:00 AM

[19a-224A-2] Origin of Deep Pits Generated on (001) β-Ga2O3 Homoepitaxial Layers Grown by HVPE

〇Keita Konishi1, Ken Goto2,3,1, Hisashi Murakami1,4, Akito Kuramata3, Shigenobu Yamakoshi2,3, Yoshinao Kumagai1,4 (1.Tokyo Univ. of Agri. & Tech., 2.Tamura Corp., 3.Novel Crystal Tech., 4.TUAT GIR)

Keywords:Crystal growth, HVPE, Gallium oxide