The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 19, 2018 9:30 AM - 11:30 AM 224A (224-1)

Takumi Ikenoue(Kyoto Univ.)

10:30 AM - 10:45 AM

[19a-224A-5] Fabrication of Ga2O3 on sapphire substrate with particles of Au

Yasuhisa Masuda1, Kentaro Kaneko1, Yuichi Oshima2, Takashi Shinohe3, Shizuo Fujita1 (1.Graduate School of Eng., Kyoto Univ., 2.NIMS, 3.FLOSFIA)

Keywords:gallium oxide