11:15 AM - 11:30 AM
[19a-224A-8] Halide Vapor Phase Epitaxy of Single-Crystal c-In2O3(111) Using c-Plane Sapphire Off Substrates
Keywords:crystal-growth, halide vapor phase epitaxy, indium oxide
Oral presentation
21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Wed. Sep 19, 2018 9:30 AM - 11:30 AM 224A (224-1)
Takumi Ikenoue(Kyoto Univ.)
11:15 AM - 11:30 AM
Keywords:crystal-growth, halide vapor phase epitaxy, indium oxide