The 79th JSAP Autumn Meeting, 2018

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-233-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Wed. Sep 19, 2018 9:00 AM - 12:00 PM 233 (233)

Reo Kometani(Univ. of Tokyo)

9:45 AM - 10:00 AM

[19a-233-3] Formation of Epitaxial HfGe2/Ge contact and its crystalline and electrical properties

〇Kazuki Senga1, Osamu Nakatsuka1,2, Akihiro Suzuki1,3, Mitsuo Sakashita1, Shigeaki Zaima1,4 (1.Grad. Sch. of Eng., Nagoya Univ., 2.Reserch Fellow of JSPS, 3.IMaSS, Nagoya Univ., 4.IIFS, Nagoya. Univ.)

Keywords:contact, HfGe