The 79th JSAP Autumn Meeting, 2018

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17 Nanocarbon Technology » 17.3 Layered materials

[19a-311-1~12] 17.3 Layered materials

Wed. Sep 19, 2018 9:00 AM - 12:15 PM 311 (Cascade)

Tomoki Machida(Univ. of Tokyo)

9:30 AM - 9:45 AM

[19a-311-3] Fabrication of MoTe2-tunneling FET device

〇Hidemitsu Ouchi1, Kota Kamiya1, Kohei Sakanashi1, Thomas Guehenneux1, Peter Krueger1, Jonathan Bird2, Nobuyuki Aoki1 (1.Chiba Univ., 2.Univ. at Buffalo.)

Keywords:Transition metal dichalcogenide