The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19a-436-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 9:30 AM - 11:45 AM 436 (436)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.)

10:45 AM - 11:00 AM

[19a-436-5] On the possibility of Mg2(Si, C) with the anti-fluorite structure

Yoji Imai1, Atsushi Yamamoto1, Ken-ichi Takarabe2 (1.AIST, 2.Okayama Univ. Sci)

Keywords:Mg2Si, carbon substitution, band gap

In view of the reported results that Mg2C with the anti-fluorite structure becomes stable under high pressure, we attempted to predict whether the solid solution of Mg2SiXC1-X with the same structure might be stable under high pressures using first-principle calculations. Though it was predicted that Mg2SiXC1-X would be energetically more stable than Mg+ Si + C under higher pressures, it was found that the substitution of Si in the Mg2Si lattice with C atoms would cause band gap shrinkage in spite of our expectations.