The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19a-436-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 9:30 AM - 11:45 AM 436 (436)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.)

11:00 AM - 11:15 AM

[19a-436-6] Electrical properties of MgSiSn thin films formed by co-sputtering

〇(M1)Syotaro Fuse1, Hideyuki Wada1, Hiroshi Katsumata1 (1.Meiji Univ.)

Keywords:semiconductor, Mg2Si, co-sputtering