Oral presentation

[19a-436-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 9:30 AM - 11:45 AM 436 (436)

Takashi Suemasu(Univ. of Tsukuba), Hirokazu Tatsuoka(Shizuoka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[19a-436-1] Fabrication and characterization of BaSi₂ on transparent conductive oxide films
by vacuum evaporation

〇Yoshihiko Nakagawa¹, Takeya Mochizuki¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

9:45 AM - 10:00 AM

[19a-436-2] Synthesis of Mg₂Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality

〇Issei Horiba¹, Michinobu Fujiwara¹, Yosihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyosi Kurokwa¹, Takashi Itoh¹, Noritaka Usami¹ (1.Nagoya Univ.)

10:00 AM - 10:15 AM

[19a-436-3] The influence of Ge substrate modification on photoresponse properties of evaporated BaSi₂ films for thin-film solar cells application

Lien Mai Thi Kieu^1,2,3, 〇Yoshihiko Nakagawa², Yasuyoshi Kurokawa², Noritaka Usami² (1.V. B. L., Nagoya Univ., 2.Nagoya Univ., 3.The Univ. of Danang)

10:15 AM - 10:30 AM

[19a-436-4] Formation of Pd silicide on Si nanowire

〇Naoya Fujiwara¹, Yuma Okazaki¹, Takeshi Ishiyama¹ (1.Toyohashi Univ.)

10:45 AM - 11:00 AM

[19a-436-5] On the possibility of Mg₂(Si, C) with the anti-fluorite structure

〇Yoji Imai¹, Atsushi Yamamoto¹, Ken-ichi Takarabe² (1.AIST, 2.Okayama Univ. Sci)

11:00 AM - 11:15 AM

[19a-436-6] Electrical properties of MgSiSn thin films formed by co-sputtering

〇(M1)Syotaro Fuse¹, Hideyuki Wada¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

11:15 AM - 11:30 AM

[19a-436-7] Electronic structure of Ba_1-xSr_xSi₂ III

〇Motoharu Imai¹, Mukesh Kumar¹, Naoto Umezawa¹ (1.NIMS)

11:30 AM - 11:45 AM

[19a-436-8] Ab initio Study of Electrodes on Phosphorene Evaluation of Adhesion Strength and Electric Property

〇Nobuya Watanabue¹, Tom Ichibha², Kenta Hongo^3,4,5, Nihar Ranjan Mohapatra⁶, Ryo Maezono² (1.Sch. Mater. Sci., JAIST, 2.Sch. Info. Sci., JAIST, 3.NIMS, 4.PRESTO, JST, 5.RCACI, JAIST, 6.Ele. Eng., IIT Gandhinagar)

Oral presentation

[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 1:45 PM - 6:45 PM 436 (436)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[19p-436-1] [Young Scientist Presentation Award Speech] Fabrication and characterization of BaSi₂ pn homojunction solar cells

〇Komomo Kodama¹, Tianguo Deng¹, Zhihao Xu¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

2:00 PM - 2:15 PM

▼ [19p-436-2] Potential of BaSi₂ homojunction solar cells on a p⁺-BaSi₂/p⁺-Si tunnel junction

〇Tianguo Deng¹, Zhihao Xu¹, Yudai Yamashita¹, Komomo Kodama¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

2:15 PM - 2:30 PM

[19p-436-3] Effect of BaSi₂ slow deposition on formation of p-type BaSi₂/n-type crystalline Si heterojunction

〇(M2)Michinobu Fujiwara¹, Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Takashi Itoh¹, Noritaka Usami¹ (1.Nagoya Univ.)

2:30 PM - 2:45 PM

[19p-436-4] Formation of SnS/BaSi₂ heterojunction by sequential evaporation and postannealing

〇Kosuke Hara¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

2:45 PM - 3:00 PM

[19p-436-5] Influence of ITO deposition pressure on the performance of p-BaSi₂/n-Si hetero junction solar cells

〇Ryota Sugiyama¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

3:15 PM - 3:30 PM

[19p-436-6] Fabrication of Mg₂Si pn-junction photodiodes with Au/Ni ring-electrode

〇Daisuke Niioka¹, Fumiya Takahashi¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

3:30 PM - 3:45 PM

[19p-436-7] Characterizations of BaSi₂ films by sputtering with various Ba-to-Si deposited atomic ratios

〇Satoshi Matsuno¹, Ryota Takabe¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh corp.)

3:45 PM - 4:00 PM

[19p-436-8] Carrier lifetime evaluation of Mg₂Si-PDs by OCVD method

〇Fumiya Takahashi¹, Daisuke Niioka¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

4:00 PM - 4:15 PM

[19p-436-9] Influence of Ba/Si deposition rate ratio on the electrical properties of B-doped BaSi₂ epitaxial films

〇Shu Sugiyama¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

4:30 PM - 4:45 PM

[19p-436-10] Synthesis of a new nitride-semiconductor, Ca(Mg_1-xZn_x)₂N₂ (x = 0 - 1)

〇(M2)Masatake Tsuji¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2 (1.MSL Tokyo Tech, 2.MCES Tokyo Tech)

4:45 PM - 5:00 PM

△ [19p-436-11] Green emission from SrHfS₃ with perovskite structure at room temperature

〇Kota Hanzawa¹, Soshi Iimura¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2 (1.MSL, Tokyo Tech, 2.MCES, Tokyo Tech)

5:00 PM - 5:15 PM

△ [19p-436-12] The generation of spin current in semiconducting FeSi2 at room temperature

〇Kenichiro Sakai¹, Hiroki Ishimoto², Yuki Asai², Kazuya Ishibashi², Tetsuo Tabei³, Masahiko Nishijima⁴, Tsuyoshi Yoshitake² (1.NIT, Kurume Coll., 2.Kyushu Univ., 3.Hiroshima Univ., 4.Tohoku Univ.)

5:15 PM - 5:30 PM

[19p-436-13] Optical absorption spectra of type II Ge clathrate films in the region from UV to Infrared light

〇Takuma Maeda¹, Himanshu S. Jha¹, Fumitaka Ohashi¹, Tetsuji Kume¹, Shuichi Nonomura¹ (1.Gifu Univ.)

5:45 PM - 6:00 PM

[19p-436-14] Doping of Bi into Si crystal in an implantation way

〇Kazushi Miki¹, Atsuo Kawasuso², Masaki Maekawa², Hiroo Tajiri³, Naohisa Happo⁴, Ang Artoni Kevin Roquero⁵, Koichi Hayashi⁵ (1.Univ. Hyogo, 2.QST-Takasaki, 3.JASRI, 4.Hiroshima Citi Univ., 5.NITech)

6:00 PM - 6:15 PM

[19p-436-15] Investigation of point defects in BaSi₂ absorber layers grown by molecular beam epitaxy

〇Yudai Yamashita¹, Takuma Sato¹, Kaoru Toko¹, Akira Uedono¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

6:15 PM - 6:30 PM

[19p-436-16] Electron paramagnetic resonance lines of a-axis-epitaxial BaSi₂ thin-film

〇Takuma Sato^1,2, Serge Gambarelli², Yudai Yamashita¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Univ. Grenoble Alps, CEA, CNRS, INAC-SyMMES)

6:30 PM - 6:45 PM

▲ [19p-436-17] Significant photoresponsivity improvement of BaSi2 films by atomic hydrogen irradiation using radio-frequency plasma

〇(D)Zhihao Xu¹, Tianguo Deng¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Unive. Tsukuba)

Poster presentation

[20a-PA4-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PA (Event Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[20a-PA4-1] Attempt at addition of magnetic 3d transition metals to BaSi₂ films

〇Keita Ito^1,2, Masami Mesuda³, Hideto Kuramochi³, Takashi Suemasu⁴, Koki Takanashi^1,2 (1.IMR, Tohoku Univ., 2.CSRN, Tohoku Univ., 3.Tosoh Corp., 4.Inst. of Appl. Phys., Univ. of Tsukuba)

9:30 AM - 11:30 AM

▲ [20a-PA4-2] Investigation of defect levels in undoped-BaSi₂ epitaxial films by PL measurement

〇Louise BENINCASA^1,2, Hirofumi Hoshida³, Tianguo Deng¹, Takuma Sato^1,2, Kaoru Toko¹, Yoshikazu Terai³, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Univ. Grenoble Alpes, 3.Kyushu Inst. Tech.)

9:30 AM - 11:30 AM

[20a-PA4-3] Ba/Si flux ratio dependence of photoreflectance spectra in BaSi₂ epitaxial films

〇Hirofumi Hoshida¹, Takashi Suemasu², Yoshikazu Terai¹ (1.Kyushu Inst. of Tech., 2.Univ. of Tsukuba)

9:30 AM - 11:30 AM

[20a-PA4-4] Small-tilt-angle grain boundaries in Mg₂Si single crystals grown by VB method (II)

〇Yutaro Fuse¹ (1.Ibaraki Univ.)

9:30 AM - 11:30 AM

[20a-PA4-5] UPS study on surface electronic state of Mg₂Si single crystals

〇Taku Tanimoto¹, Mamoru Kitaura¹, Junpei Azuma², Isamu Yamamoto², Masaki Imamura², Kazutoshi Takahashi², Haruhiko Udono³, Manabu Ishizaki¹, Akimasa Ohnishi¹, Kazuhiko Hara⁴ (1.Yamagata Univ., 2.Saga Univ. SR, 3.Ibaraki Univ., 4.Shizuoka Univ. RIE.)

9:30 AM - 11:30 AM

[20a-PA4-6] Mobility analysis of n-type Mg₂Si crystals

〇Fuko Yaguchi¹, Kenichi Takarabe², Haruhiko Udono¹ (1.Ibaraki Univ., 2.Okayama Univ. of Science)

9:30 AM - 11:30 AM

[20a-PA4-7] Evaluation of the MgSi/Si Junction’s Band Offset by Hard X-ray Photoelectron Spectroscopy

〇Ryota Karakama¹, Yuta Iwanami¹, Yan Wu¹, Kuniyuki Kakushima², Yoshihiro Takahashi¹ (1.Nihon Univ., 2.Tokyo Inst.)

9:30 AM - 11:30 AM

[20a-PA4-8] Fine Scale Structural Property of Mg₂Si/Si Nanosheet Bundle Composites

Yalei Huang¹, Ryo Tamaki², Peiling Yuan¹, Yuki Kumazawa³, Nazmul Ahsan², Yoshitaka Okada², Yasuhiro Hayakawa⁴, 〇Hirokazu Tatsuoka³ (1.Grad. Sch. Sci. & Technol., Shizuoka Univ., 2.RCAST, The Univ. of Tokyo, 3.Grad. Sch. Integr. Sci. & Technol., Shizuoka Univ., 4.Res. Inst. Electron., Shizuoka Univ.)

9:30 AM - 11:30 AM

[20a-PA4-9] Structural characterization of CaSi₂ microstructure grown on Si (111)

〇Kenji Ito¹, Tetsu Ohsuna¹, Takashi Suemasu², Hideyuki Nakano¹ (1.TOYOTA CRDL, INC., 2.Univ. Tsukuba)

9:30 AM - 11:30 AM

[20a-PA4-10] Fabrication of lateral-type spin valve elements by electron lithography and electrical spin injection into epitaxially-grown beta FeSi2

〇Kenichiro Sakai¹, Hiroki Ishimoto², Tetsuo Tabei³, Tsuyoshi Yoshitake² (1.NIT, Kurume Coll., 2.Kyushu Univ., 3.Hiroshima Univ.)

9:30 AM - 11:30 AM

[20a-PA4-11] Growth of beta-FeSi₂ thin films by co-sputtering with high purity Si and Fe targets

〇Tsuyoshi Yoshitake¹, Seiya Uchida¹, Yuki Tanaka¹, Tomohiro Nogami¹, Tomohiro Yoshida² (1.Kyushu Univ., 2.Fukuoka Pref. Inst.)

9:30 AM - 11:30 AM

[20a-PA4-12] Transport Properties of InGaZnO₄ bulk single crystals.

〇(M1)Yuki Kobayashi¹, Yusuke Tanaka¹, Noboru Kimizuka³, Takenori Fujii², Nobuaki Miyakawa¹ (1.Tokyo Univ. Sci., 2.Tokyo Univ., 3.Sonora Univ.)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19a-436-1~8] 13.2 Exploratory Materials, Physical Properties, Devices

[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

▼ [19p-436-2] Potential of BaSi2 homojunction solar cells on a p+-BaSi2/p+-Si tunnel junction

△ [19p-436-11] Green emission from SrHfS3 with perovskite structure at room temperature

△ [19p-436-12] The generation of spin current in semiconducting FeSi2 at room temperature

▲ [19p-436-17] Significant photoresponsivity improvement of BaSi2 films by atomic hydrogen irradiation using radio-frequency plasma

[20a-PA4-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [20a-PA4-2] Investigation of defect levels in undoped-BaSi2 epitaxial films by PL measurement

Authentication

▼ [19p-436-2] Potential of BaSi₂ homojunction solar cells on a p⁺-BaSi₂/p⁺-Si tunnel junction

△ [19p-436-11] Green emission from SrHfS₃ with perovskite structure at room temperature

▲ [20a-PA4-2] Investigation of defect levels in undoped-BaSi₂ epitaxial films by PL measurement