The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 1:45 PM - 6:45 PM 436 (436)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

3:15 PM - 3:30 PM

[19p-436-6] Fabrication of Mg2Si pn-junction photodiodes with Au/Ni ring-electrode

〇Daisuke Niioka1, Fumiya Takahashi1, Misa Yoshida2, Daiju Tsuya2, Haruhiko Udono1 (1.Ibaraki Univ., 2.NIMS)

Keywords:semiconductor, IR-detector, Mg2Si