10:15 〜 10:45
▲ [19a-CE-4] Challenges in 4H-SiC crystal growth and epitaxy for ultra-high voltage device applications
キーワード：wide gap semiconductor, power device, SiC
SiC power devices outperform conventional Si ones in term of low loss of electrical power and reducing device size of systems under ultra-high voltage ranges over 20kV. For example, Series connected Si Shyrister can be converted to single SiC IGBT. Then, feature electronic power transmission systems strongly require such devices.The development of SiC IGBT strongly depends on material qualities of 4H-SiC bulk crystals and epitaxial layers. In generally, ultra-thick n-type drift layers up to 300μm grown on p-type substrates are used for n-channel IGBT over 20kV. In this case, low resistivity p-type layer is applied as a drain region. However, conventional SiC p-type substrates have very high resistivity over 1 Ωcm. In addition, high quality thick epitaxial layers with long carrier lifetime are needed. In this presentation, recent progress for growth of low resistivity 4H-SiC p-type substrates and thick epitaxial layer for IGBT applications will be presented.