[19a-PA4-1~13] 3.7 Laser processing

[19a-PA4-10] Development of a laser doping system for SiC power device fabrication

〇Toshifumi Kikuchi^1,2, Kaname Imokawa^1,2, Akihiro Ikeda³, Daisuke Nakamura¹, Tanemasa Asano¹, Hiroshi Ikenoue^1,2 (1.Grad. Sch. ISEE. Kyushu Univ., 2.NEXT GLP, Kyushu Univ., 3.Sojo Univ.)

Keywords:4H-SiC, power device, laser ablation

Silicon carbide is well known wide bandgap semiconductor and superior material properties.
We have investigated a laser doping method for high-concentration, low-temperature doping and reported that heavy N or Al doping of 4H-SiC can be achieved by laser ablation of thin source films (SiNx or Al) formed on the SiC substrate. Recently, we have developed a laser doping method capable of processing the entire SiC wafer with high productivity for a manufacturing system.