The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

5:30 PM - 5:45 PM

[19p-131-15] Measurement of carbon concentration in silicon crystal
(XVII) Measurement of polysilicon down to 1014 cm-3 by infrared absorption

〇Naohisa Inoue1,2, Schuichi Kawamata2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

Infrared absorption measurement of carbon concentration in polycrystalline silicon was examined. A reference sample with substitutional carbon below 10^14 atoms/cm^3 was used. Interfering phonon fractional absorption bands were reduced by a heat treatment and removed by the Lorentzian fitting. No concentration difference was observed in the difference spectra showing that concentration was under 10^14/cm^3.