Reaction of silicon with gaseous CO generated from graphite material parts in Czochralski silicon furnace

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

2:00 PM - 2:15 PM

〇Hiroyuki Tsubota¹, Yuta Nagai¹, Yoshiaki Abe¹, Hisashi Matsumura¹ (1.GlobalWafers Japan)

Keywords:Crystal growth, Silicon, Carbon concentration