[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

[19p-131-4] Oxygen Precipitation Properties of Nitrogen-Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration

〇Kaoru Kajiwara¹, Kazuhiro Harada¹, Kazuhiro Torigoe¹, Masataka Hourai¹ (1.SUMCO Corporation)

Keywords:silicon, oxygen precipitation, nitrogen

Oxygen precipitation properties of nitrogen-doped Czochralski (Cz) silicon single crystals with low oxygen concentration (3.5×10¹⁷ /cm³) were investigated. It was found that oxygen precipitations are not generated even after the heat treatment. It is considered that oxygen precipitate nuclei are not present in As-grown, or oxygen precipitate nuclei are dissapeared by heat treatment since it is low oxygen concentration. Nitrogen-doped Cz silicon with low oxygen concentration is expected to be utilized as a low-cost IGBT substrate.