Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[19p-131-1] Thermal gradient in high-speed growth is large or not

〇Hirofumi Harada¹, Lijun Liu¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

1:45 PM - 2:00 PM

[19p-131-2] Observations of the defect distributions in Si-CZ crystals detached from the melt using the rapid cooling and the slow cooling heat shield

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.ShinEtsu Handotai, 2.ISIR, Osaka Univ.)

2:00 PM - 2:15 PM

[19p-131-3] Reaction of silicon with gaseous CO generated from graphite material parts in Czochralski silicon furnace

〇Hiroyuki Tsubota¹, Yuta Nagai¹, Yoshiaki Abe¹, Hisashi Matsumura¹ (1.GlobalWafers Japan)

2:15 PM - 2:30 PM

[19p-131-4] Oxygen Precipitation Properties of Nitrogen-Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration

〇Kaoru Kajiwara¹, Kazuhiro Harada¹, Kazuhiro Torigoe¹, Masataka Hourai¹ (1.SUMCO Corporation)

2:30 PM - 2:45 PM

[19p-131-5] Self-interstitial Concentration Dependence of Thermal Donor Formation in Si Crystal

〇Kazuhisa Torigoe¹, Toshiaki Ono¹ (1.SUMCO)

3:00 PM - 3:15 PM

[19p-131-6] Effect of Strain Rate on Generation of Slip Dislocation from Scratch in Si Wafers

〇JUN FUJISE¹, TOSHIAKI ONO¹ (1.SUMCO)

3:15 PM - 3:30 PM

[19p-131-7] Impact of the deviation of the tilt angle on the recombination activity and the impurity segregation ability of S3{111} symmetric tilt boundaries

〇Yutaka Ohno¹, Kentaro Kutsukake¹, Takehiro Tamaoka², Seiji Takeda², Yasuo Shimizu³, Naoki Ebisawa³, Koji Inoue³, Yasuyoshi Nagai³, Noritaka Usami⁴ (1.IMR, Tohoku Univ., 2.ISIR, Osaka Univ., 3.The Oarai Center, IMR, Tohoku Univ., 4.GSE, Nagoya Univ.)

3:30 PM - 3:45 PM

[19p-131-8] Segregation Gettering Mechanism in Heavily P-doped Silicon Wafers

〇Rie Ozaki¹, Kazuhisa Torigoe¹, Taisuke Mizuno¹, Kazuhiro Yamamoto¹ (1.SUMCO)

3:45 PM - 4:00 PM

[19p-131-9] Cathodoluminescence evaluation of boron ion implantation damage in silicon wafers

〇Satoko Nakagawa¹, Toshiro Minami¹, Takashi Ishikawa¹, Shin-ichi Nishizawa² (1.GlobalWafers Japan, 2.Kyushu Univ.)

4:00 PM - 4:15 PM

[19p-131-10] Dissociation and Association Behavior of Hydrogen in Carbon Cluster Implanted Region during Device Fabrication Process

〇Ryosuke Okuyama¹, Ayumi Masada¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

4:30 PM - 4:45 PM

[19p-131-11] Measurement of low level carbon in silicon substrate using SIMS

〇Masumi Obuchi¹, Kazue Shingu¹, Larry Wang², Peter Zhao², Man Xu², Jing Guo², Hang Dong Lee^2,1 (1.NANO SCIENCE, 2.EAG)

4:45 PM - 5:00 PM

[19p-131-12] Measurement of depth profile for hydrogen in Silicon Substrate using Deep Level Transient Spectroscopy Method. ~Behavior of hydrogen in wet process~

〇Takafumi Negi¹, Kazutaka Eriguchi¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO)

5:00 PM - 5:15 PM

[19p-131-13] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(13) Shallow thermal donors, behavior and measurement

〇Naohisa Inoue^1,2, Shuichi Kawamata² (1.Tokyo Univ. Agri. Technol, 2.Osaka Pref. Univ.)

5:15 PM - 5:30 PM

[19p-131-14] Measurement of carbon concentration in silicon crystal
(XI) Low temperature measurement down to 10¹³cm^-3 by IR

〇Naohisa Inoue^1,2, Shuichi Kawamata² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

5:30 PM - 5:45 PM

[19p-131-15] Measurement of carbon concentration in silicon crystal
(XVII) Measurement of polysilicon down to 10¹⁴ cm^-3 by infrared absorption

〇Naohisa Inoue^1,2, Schuichi Kawamata² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

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