Naohisa Inoue

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Speaker, Author, Co-Author

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

5:00 PM - 5:15 PM

[19p-131-13] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(13) Shallow thermal donors, behavior and measurement

〇Naohisa Inoue^1,2, Shuichi Kawamata² (1.Tokyo Univ. Agri. Technol, 2.Osaka Pref. Univ.)

5:15 PM - 5:30 PM

[19p-131-14] Measurement of carbon concentration in silicon crystal
(XI) Low temperature measurement down to 10¹³cm^-3 by IR

〇Naohisa Inoue^1,2, Shuichi Kawamata² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

5:30 PM - 5:45 PM

[19p-131-15] Measurement of carbon concentration in silicon crystal
(XVII) Measurement of polysilicon down to 10¹⁴ cm^-3 by infrared absorption

〇Naohisa Inoue^1,2, Schuichi Kawamata² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)