[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

[19p-131-6] Effect of Strain Rate on Generation of Slip Dislocation from Scratch in Si Wafers

〇JUN FUJISE¹, TOSHIAKI ONO¹ (1.SUMCO)

Keywords:silicon, dislocation, stress

Scratches are introduced to Si wafers that are dislocation-free crystals, and the dependence of the critical stress on the strain rate at which Slip generates from that point is not clarified. Therefore, in the high temperature three-point bending test, the experiment was tested by changing the strain rate. Experiments showed that the critical stress rises as the strain rate rises. It is possible to equation the experimental results and calculate the critical stress in consideration of the effect of the strain rate on the change in the heat treatment condition.