Oral presentation

[19a-131-1~11] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 9:00 AM - 12:00 PM 131 (131+132)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[19a-131-1] Development of the adaptive mapping and its application to micro-beam X-ray diffraction

〇Kentaro Kutsukake¹, Kenichi Inoue¹, Takashi Segi², Takefumi Kamioka³, Takuo Sasaki⁴, Seiji Fujikawa⁴, Masamitu Takahashi⁴ (1.Nagoya Univ., 2.Kobelco Research Institute, Inc., 3.Toyota Technol. Inst., 4.QST)

9:15 AM - 9:30 AM

[19a-131-2] Optical Property of Compound Fluoride Materials Ca_xSr_1-xF₂ at Room/Low Temperature

〇Kentaro Suzuki¹, Jun Otani¹, Shingo Ono¹, Masahiko Kase² (1.NITech, 2.USHIO INC.)

9:30 AM - 9:45 AM

△ [19a-131-3] Measurement of Multi-photon Luminescence for Distribution of Eu²⁺ and Eu³⁺ Ions Doped CaF₂ Single Crystal Grown by Different Method

〇Hiroaki Ito¹, Shusaku Terakawa¹, Miho Tanaka¹, Singo Ono¹, Akihiro Yamaji², Shunsuke Kurosawa², Akira Yoshikawa² (1.Nagoya Institute of Technology, 2.Tohoku Univ.)

9:45 AM - 10:00 AM

[19a-131-4] The Effect of Different Ce³⁺ Ion Distribution on Lasing Properties of Ce³⁺:LiCaAlF₆ Single Crystal

〇Shusaku Terakawa¹, Shingo Ono¹, Marilou Cadatal-Raduban², Minh Hong Pham³, Takaya Taniguchi⁴, Kohei Yamanoi⁴, Takafumi Hirata⁵ (1.Nagoya Institute of Technology, 2.Massey Univ., 3.VAST, 4.Osaka Univ., 5.Tokyo Univ.)

10:00 AM - 10:15 AM

[19a-131-5] Evaluation of carrier density of GaN crystal using THz wave and Raman scattering spectroscopy

〇Hidekazu Yamamoto¹, Yuki Honma¹, Yuki Ogura¹, Seigo Ohno^2,3, Hiroaki Minamide², Hiromasa Ito² (1.Chiba Inst. of Tech., 2.RIKEN, 3.Tohoku Univ.)

10:15 AM - 10:30 AM

[19a-131-6] Evaluation of SiC-Schottky barrier diode by multifunctional scanning probe microscope 2

〇Yuuki Uchida¹, Mizuki Nakajima¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech)

10:45 AM - 11:00 AM

[19a-131-7] Diffusion model for bulk and surface recombination of free carriers in silicon wafer: III. Exact solution with laser-damping included

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. of Tech.)

11:00 AM - 11:15 AM

[19a-131-8] 【Highlighted Presentation】Evaluation of Gettering Efficiency in Silicon Wafer by Pulse Photoconductivity Method

〇Takahiro Maeta¹, Susumu Maeda¹, Moriya Miyashita¹, Masao Yoshioka², Shotaro Kuzukawa³, Hiroki Matsuyama³, Kazuhiro Kobayashi³, Takeshi Hashishin³, Hiroshi Kubota³ (1.GlobalWafers Japan, 2.Faculty of Engineering Kumamoto Univ., 3.GSST Kumamoto Univ.)

11:15 AM - 11:30 AM

[19a-131-9] A problem on the symmetry of the structure Cu₄ complex

〇Koun Shirai¹, Takayoshi Fujimura¹ (1.ISIR, Osaka Univ.)

11:30 AM - 11:45 AM

[19a-131-10] First principles analysis on Frenkel pair formation/recombination in Si crystals

〇Kouji Sueoka¹ (1.Okayama Pref. Univ.)

11:45 AM - 12:00 PM

[19a-131-11] Ground-State of Ultrashallow Thermal Donors in Si Crystals

〇Akito Hara¹, Teruyoshi Awano¹ (1.Tohoku Gakuin Univ.)

Oral presentation

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 19, 2018 1:30 PM - 5:45 PM 131 (131+132)

Kentaro Kutsukake(Nagoya Univ.), Toshinori Taishi(Shinshu Univ.), Yasuo Shimizu(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[19p-131-1] Thermal gradient in high-speed growth is large or not

〇Hirofumi Harada¹, Lijun Liu¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

1:45 PM - 2:00 PM

[19p-131-2] Observations of the defect distributions in Si-CZ crystals detached from the melt using the rapid cooling and the slow cooling heat shield

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.ShinEtsu Handotai, 2.ISIR, Osaka Univ.)

2:00 PM - 2:15 PM

[19p-131-3] Reaction of silicon with gaseous CO generated from graphite material parts in Czochralski silicon furnace

〇Hiroyuki Tsubota¹, Yuta Nagai¹, Yoshiaki Abe¹, Hisashi Matsumura¹ (1.GlobalWafers Japan)

2:15 PM - 2:30 PM

[19p-131-4] Oxygen Precipitation Properties of Nitrogen-Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration

〇Kaoru Kajiwara¹, Kazuhiro Harada¹, Kazuhiro Torigoe¹, Masataka Hourai¹ (1.SUMCO Corporation)

2:30 PM - 2:45 PM

[19p-131-5] Self-interstitial Concentration Dependence of Thermal Donor Formation in Si Crystal

〇Kazuhisa Torigoe¹, Toshiaki Ono¹ (1.SUMCO)

3:00 PM - 3:15 PM

[19p-131-6] Effect of Strain Rate on Generation of Slip Dislocation from Scratch in Si Wafers

〇JUN FUJISE¹, TOSHIAKI ONO¹ (1.SUMCO)

3:15 PM - 3:30 PM

[19p-131-7] Impact of the deviation of the tilt angle on the recombination activity and the impurity segregation ability of S3{111} symmetric tilt boundaries

〇Yutaka Ohno¹, Kentaro Kutsukake¹, Takehiro Tamaoka², Seiji Takeda², Yasuo Shimizu³, Naoki Ebisawa³, Koji Inoue³, Yasuyoshi Nagai³, Noritaka Usami⁴ (1.IMR, Tohoku Univ., 2.ISIR, Osaka Univ., 3.The Oarai Center, IMR, Tohoku Univ., 4.GSE, Nagoya Univ.)

3:30 PM - 3:45 PM

[19p-131-8] Segregation Gettering Mechanism in Heavily P-doped Silicon Wafers

〇Rie Ozaki¹, Kazuhisa Torigoe¹, Taisuke Mizuno¹, Kazuhiro Yamamoto¹ (1.SUMCO)

3:45 PM - 4:00 PM

[19p-131-9] Cathodoluminescence evaluation of boron ion implantation damage in silicon wafers

〇Satoko Nakagawa¹, Toshiro Minami¹, Takashi Ishikawa¹, Shin-ichi Nishizawa² (1.GlobalWafers Japan, 2.Kyushu Univ.)

4:00 PM - 4:15 PM

[19p-131-10] Dissociation and Association Behavior of Hydrogen in Carbon Cluster Implanted Region during Device Fabrication Process

〇Ryosuke Okuyama¹, Ayumi Masada¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

4:30 PM - 4:45 PM

[19p-131-11] Measurement of low level carbon in silicon substrate using SIMS

〇Masumi Obuchi¹, Kazue Shingu¹, Larry Wang², Peter Zhao², Man Xu², Jing Guo², Hang Dong Lee^2,1 (1.NANO SCIENCE, 2.EAG)

4:45 PM - 5:00 PM

[19p-131-12] Measurement of depth profile for hydrogen in Silicon Substrate using Deep Level Transient Spectroscopy Method. ~Behavior of hydrogen in wet process~

〇Takafumi Negi¹, Kazutaka Eriguchi¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO)

5:00 PM - 5:15 PM

[19p-131-13] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(13) Shallow thermal donors, behavior and measurement

〇Naohisa Inoue^1,2, Shuichi Kawamata² (1.Tokyo Univ. Agri. Technol, 2.Osaka Pref. Univ.)

5:15 PM - 5:30 PM

[19p-131-14] Measurement of carbon concentration in silicon crystal
(XI) Low temperature measurement down to 10¹³cm^-3 by IR

〇Naohisa Inoue^1,2, Shuichi Kawamata² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

5:30 PM - 5:45 PM

[19p-131-15] Measurement of carbon concentration in silicon crystal
(XVII) Measurement of polysilicon down to 10¹⁴ cm^-3 by infrared absorption

〇Naohisa Inoue^1,2, Schuichi Kawamata² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Poster presentation

[20a-PA6-1~9] 15.7 Crystal characterization, impurities and crystal defects

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PA (Event Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[20a-PA6-1] Computer Simulation of Intrinsic Point Defect Behaviors Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth

〇Kouji Sueoka¹, Yuji Mukaiyama², Susumu Maeda³, Masaya Iizuka², Vasif Mamedov⁴ (1.Okayama Pref. Univ., 2.STR Japan, 3.GlobalWafers Japan, 4.STR Group)

9:30 AM - 11:30 AM

[20a-PA6-2] A first-principles study on driving force for grain boundary segregation of impurities in silicon

Tatsuya Yokoi¹, 〇Yusuke Noda¹, Atsutomo Nakamura¹, Katsuyuki Matsunaga¹ (1.Nagoya Univ.)

9:30 AM - 11:30 AM

△ [20a-PA6-3] Impact of Si (001) surface and SiO₂ film on the stability of metal atoms

〇(M1)Noriyuki Nonoda¹, Koji Sueoka² (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ.)

9:30 AM - 11:30 AM

[20a-PA6-4] First-principles analysis of defect behavior related to the bulk lifetime
of silicon crystals for power device application

〇(M1)Daiki Tsuchiya¹, Koji Sueoka¹, Hidekazu Yamamoto² (1.OPU, 2.Chiba Tech)

9:30 AM - 11:30 AM

[20a-PA6-5] Evaluation of Si SJ-MOSFET by multifunctional scanning probe microscope

〇(M1)Sho Masuda¹, Yuki Uchida¹, Atsushi Doi¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

9:30 AM - 11:30 AM

[20a-PA6-6] Evaluation of trench SiC-MOSFET by multifunctional scanning probe microscope

〇Yuuki Uchida¹, Atsushi Doi¹, Mizuki Nakajima¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech)

9:30 AM - 11:30 AM

[20a-PA6-7] Evaluation of strained SiC wafer by Raman scattering spectroscopy

〇(M1)Yuuki Ogura¹, Shinsuke Sakai², Hidekazu Yamamoto¹ (1.Chiba Inst of Tech, 2.Success Ltd)

9:30 AM - 11:30 AM

[20a-PA6-8] Characterization of dislocations in EFG β-Ga₂O₃ single crystal by synchrotron X-ray topography

〇Yongzhao Yao¹, Y. Sugawara¹, Y. Ishikawa¹, Y. Takahashi², K. Hirano³ (1.JFCC, 2.Nihon Univ., 3.KEK)

9:30 AM - 11:30 AM

▲ [20a-PA6-9] Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography

〇(PC)Jaemyung Kim¹, Okkyun Seo¹, Chulho Song¹, Satoshi Hiroi¹, Yanna Chen¹, Yoshihiro Irokawa¹, Toshihide Nabatame¹, Yasuo Koide¹, Osami Sakata¹ (1.NIMS)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19a-131-1~11] 15.7 Crystal characterization, impurities and crystal defects

△ [19a-131-3] Measurement of Multi-photon Luminescence for Distribution of Eu2+ and Eu3+ Ions Doped CaF2 Single Crystal Grown by Different Method

[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

[20a-PA6-1~9] 15.7 Crystal characterization, impurities and crystal defects

△ [20a-PA6-3] Impact of Si (001) surface and SiO2 film on the stability of metal atoms

▲ [20a-PA6-9] Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography

Authentication

△ [19a-131-3] Measurement of Multi-photon Luminescence for Distribution of Eu²⁺ and Eu³⁺ Ions Doped CaF₂ Single Crystal Grown by Different Method

△ [20a-PA6-3] Impact of Si (001) surface and SiO₂ film on the stability of metal atoms