9:30 AM - 11:30 AM
[20a-PA6-7] Evaluation of strained SiC wafer by Raman scattering spectroscopy
Keywords:Silicon carbide, Raman scattering spectroscopy, Stress
Devices using silicon carbide or gallium nitride, which are wide-gap semiconductors, have been studied as power devices for high voltage and high speed driving.
From the viewpoint of cost reduction, it is important to increase the diameter of SiC wafers.
However, with the increase in the diameter of the SiC wafer, warping and cracking of the wafer due to crystal defects such as dislocations in the wafer, differences in surface roughness between the front and back surfaces, and the like are problems.
Therefore, we report on the evaluation of 4H - SiC wafers, which are considered to contain distortion, by Raman scattering spectroscopy.
From the viewpoint of cost reduction, it is important to increase the diameter of SiC wafers.
However, with the increase in the diameter of the SiC wafer, warping and cracking of the wafer due to crystal defects such as dislocations in the wafer, differences in surface roughness between the front and back surfaces, and the like are problems.
Therefore, we report on the evaluation of 4H - SiC wafers, which are considered to contain distortion, by Raman scattering spectroscopy.