[19p-131-1~15] 15.7 Crystal characterization, impurities and crystal defects

[19p-131-8] Segregation Gettering Mechanism in Heavily P-doped Silicon Wafers

〇Rie Ozaki¹, Kazuhisa Torigoe¹, Taisuke Mizuno¹, Kazuhiro Yamamoto¹ (1.SUMCO)

Keywords:semiconductor, silicon, gettering

Segregation gettering for copper occurs in n-type silicon wafers heavily doped with the concentration of phosphorus (P) above 10¹⁹ cm^-3. Segregation gettering is suggested to occur due to the binding between substitutional copper and phosphorus. For this reaction, it is necessary that vacancy (V) exists at a site adjacent to phosphorus and forms pairs with phosphorus; however, the formation mechanism is not revealed. In this work, the origin of P-V formation is investigated by comparing the difference of gettering efficiency between as-grown wafers and rapid-thermal-annealed wafers.