[19p-145-1~15] 12.4 有機EL・トランジスタ

▼ [19p-145-4] Very High Electrical Stability of Bottom-Gate/Top-Contact Type Polymer Based Organic Field-Effect Transistors with Perfluoropolymer-Coated Gate Dielectrics

〇(D)Kirill Dmitrievich Bulgarevich^1,2、Kenji Sakamoto¹、Takeo Minari¹、Takeshi Yasuda¹、Kazushi Miki^1,3、Masayuki Takeuchi^1,2 (1.NIMS、2.Univ. of Tsukuba、3.Univ. of Hyogo)

キーワード：OFET, Electrical stability, Polymeric organic semiconductor

Solution-processed organic field-effect transistors (OFETs) have important advantages over conventional silicon-based transistors, such as low-cost, flexibility, and light weight. In addition to the field-effect charge carrier mobility, the long-term stability of OFETs is essential for commercial applications. CYTOP^TM, is a promising gate dielectric or coating material for gate dielectric surfaces for fabricating electrically stable OFETs, because it is an excellent electrical insulator and shows a very high water-repellence. However, for solution processing, the uniform deposition of active layers is difficult on such a highly lyophobic surface due to the dewetting of common organic solvents. In this study, we developed a simple solution process to form uniform polymeric semiconductor layer of poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C16) on CYTOP-coated gate dielectric surfaces. The OFETs showed good p-channel OFET characteristics without drain current hysteresis and very high operational stability against an on-state bias stress.