[19p-146-1~22] 15.4 III-V-group nitride crystals

[19p-146-14] High-temperature AlN growth by ammonia-free metalorganic vapor phase epitaxy

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹, Mitsuaki Shimizu¹, Hajime Okumura¹ (1.AIST)

Keywords:Nitrides

III-nitride semiconductors are attracting great attentions due to their potential applications both in the optical and the electronic device fields. Among them, AlN is an important material in UV optical device and high power electronic device applications due to its direct wide bandgap of 6.0 eV at room temperature, together with high thermal conductivity, etc. In this study, we propose a new ammonia-free MOVPE (AF-MOVPE) technique to grow high quality AlN by using N₂ gas as a nitrogen source. As a result, a single crystalline Al-polarity AlN epilayer is successfully grown on a sapphire (0001) substrate.