[19p-146-1~22] 15.4 III-V-group nitride crystals

[19p-146-21] Structural analysis of m-plane Ga_1-xIn_xN/GaN multi-quantum wells grown on GaN nanowires by using an X-ray nano-beam

〇Tsurugi Kondo¹, Ryoma Seiki¹, Yasuhiko Imai², Kazushi Sumitani², Shigeru Kimura², Kenta Takagi¹, Nanami Goto¹, Takato Ichikawa¹, Daichi Imai¹, Satoshi Kamiyama¹, Takao Miyajima¹ (1.Meijo Univ., 2.Japan Synchrotron Radiation Research Inst.)

Keywords:nitride semiconductors, nano wires, x-ray diffraction

Core shell active layer of Ga_{1 -x}In_xN / GaN multi quantum wells (MQWs) grown on the GaN nanowire’s side wall have attracted much attentions as a light source for realizing high efficiency of a nitride semiconductor laser. We have conducted X-ray diffraction measurements using the X-ray nano-beam at SPring-8 of the large synchrotron radiation facility and reported the evaluation of the period and In composition of the MQWs. In this study, more precise structural analysis have become possible by adding three-dimensional strain calculation together with X-ray nano-beam diffraction measurement of symmetric reflection and asymmetric reflection.