[19p-224A-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-224A-4] Hump Phenomena of a-IGZO TFT with Top Gate Structure

〇Yuya Kuwahara¹, Kazushige Takechi¹, Jun Tanaka¹ (1.Tianma Japan)

Keywords:oxide semiconductor, IGZO, instability

We studied dependence on TFT's shape regarding hump phenomena of a top gate a-IGZO TFT with positive gate-bias stress voltage. After stress, we confirmed that a ring TFT did not have any hump while a rectangle TFT had the hump. This results support a model that hump phenomena are derived from parasitic TFTs at the TFT's edge region in the W direction.