[19p-231A-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [19p-231A-3] Understanding the Electronic Structure of Transition-Metal Based Phase-Change Material for Non-Volatile Memory Application

〇Yuta Saito¹, Yuji Sutou², Paul Fons¹, Alexander V. Kolobov¹, Satoshi Shindo³, Shogo Hatayama², Shuang Yi², Xeniya Kozina⁴, Jonathan M. Skelton⁵, Keisuke Kobayashi⁶ (1.AIST, 2.Tohoku Univ., 3.Tohoku Univ.(Present:Nagaoka Univ. Tech.), 4.Helmholtz-Zentrum, 5.Univ. Bath, 6.JASRI)

Keywords:phase-change material, electronic structure, chalcogenide

Electronic structure of a transition-metal based Cu₂GeTe₃ chalcogenide phase-change material was investigated using hard x-ray photoelectron spectroscopy as well as density functional theory calculations. It was found that Cu d-electrons are playing an important role during the phase change process. This would pave the way for exploring novel phase-change materials for future non-volatile memory application.