The 79th JSAP Autumn Meeting, 2018

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16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[19p-231A-1~8] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Wed. Sep 19, 2018 1:15 PM - 3:30 PM 231A (231-1)

Tamihiro Gotoh(Gunma Univ.), Norimitsu Yoshida(Gifu Univ.)

2:30 PM - 2:45 PM

[19p-231A-5] Near infrared absorption in Ge2Sb2Te5 films

〇Tamihiro Gotoh1 (1.Gunma Univ.)

Keywords:phase change material, photothermal deflection spectroscopy, optical absorption

By using photothermal deflection spectroscopy (PDS) extended to the near infrared region, we succeeded in observing weak absorption at 0.4 eV in Ge2Sb2Te5 films. However, the reason why weak light absorption appears is still unclear. In this study, we aim to clarify the causes of this weak absorption compared with samples with different crystallization.