[19p-231C-1~19] 12.1 Fabrications and Structure Controls

△ [19p-231C-10] Deposition Temperature Dependence on Pentacene-based Pseudo-CMOS utilizing Threshold Voltage Control by N-doped LaB₆ Interfacial Layer

〇(D)Yasutaka Maeda¹, Kyung Eun Park¹, Yuki Komatsu¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:pentacene, nitrogen-doped LaB6, interfacial layer

Pentacene-based pseudo-CMOS utilizing threshold voltage (V_TH) control by nitrogen-doped LaB₆ interfacial layer (IL) was reported. In this paper, the deposition temperature dependence for pentacene film was investigated to improve the V_TH difference between OFETs in the pseudo-CMOS. The deposition temperature at 100^oC for pentacene film increased V_TH difference and improved the inverter characteristics. Further scaling of device size would suppress the leakage current and improve the inverter characteristics.