The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[19p-235-1~13] 13.8 Optical properties and light-emitting devices

Wed. Sep 19, 2018 1:30 PM - 5:00 PM 235 (3F_Lounge2)

Yasushi Nanai(Aoyama Univ.), Kenji Shinozaki(AIST)

4:30 PM - 4:45 PM

[19p-235-12] Study of Thermal Quenching in Lu3(Al, Ga)5O12:Ce by using TRMC Technique (2)

Tomotaka Taniguchi1, Masayoshi Mikami1, Akinori Saeki2 (1.Mitsubishi Chemical, 2.Osaka Univ.)

Keywords:phosphor, thermal quenching, photoconductivity

The thermal quenching in Lu3Al5-xGaxO12:Ce (x = 0-3) has been investigated by using TRMC technique. We examined the temperature dependence of the photoconductivity and obtained the the activation energy(ΔEdc), which decreased with increasing Ga-content and did not depend on the excitation energies. It is suspected that reduced bandgap energies and shift of Ce 5d levels to higher energies cause the photoionization process and ΔEdc corresponds to the energy gap between Ce 5d1 level and the conduction band.