Oral presentation

[19a-235-1~7] 13.8 Optical properties and light-emitting devices

Wed. Sep 19, 2018 9:45 AM - 11:30 AM 235 (3Ｆ_Lounge２)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:45 AM - 10:00 AM

[19a-235-1] Nonlinear optical responses of MAPbCl₃ perovskite single crystals studied by Z-Scan method

〇(M1)Keiichi Ohara¹, Takumi Yamada¹, Hirokazu Tahara¹, Tomoko Aharen¹, Hideki Hirori¹, Yoshihiko Kanemitsu¹ (1.ICR, Kyoto univ.)

10:00 AM - 10:15 AM

[19a-235-2] Impurity Doping Effects on Electric and Electroluminescence Properties of Ca_0.6Sr_0.4TiO₃:Pr Thin Films

〇Toru Kyomen¹, Kohei Aramaki¹, Hiroshi Takashima² (1.Gunma Univ., 2.AIST)

10:15 AM - 10:30 AM

[19a-235-3] Improvement of luminescence in Ca₁₀(PO₄)₆(OH)₂:Mn⁵⁺ nano phosphor for in vivo imaging by post annealing

〇Ryo Takeuchi¹, Tadashi Ishigaki¹, Yuutarou Zaima¹, Kohei Matsubara¹, Koutoku Ohmi¹ (1.Tottori Univ.)

10:30 AM - 10:45 AM

[19a-235-4] Low Temperature Synthesis of Nano-Phosphors using Novel WASSR Method

〇Kenji Toda^1,2 (1.Niigata Univ., 2.N-Luminescence Corp.)

10:45 AM - 11:00 AM

[19a-235-5] Photoluminescence and structure of Ce³⁺-doped BaF₂-Al₂O₃-B₂O₃ glasses

〇Kenji Shinozaki¹, Sohei Sukenaga², Hiroyuki Shibata², Koji Ohara³ (1.AIST, 2.Tohoku Univ., 3.JASRI)

11:00 AM - 11:15 AM

[19a-235-6] Development of Tm³⁺-doped germanate glasses for near-infrared wideband light-sources

〇(D)Seiya Nishimura¹, Yasushi Nanai¹, Shingo Fuchi¹ (1.Aoyama Gakuin Univ.)

11:15 AM - 11:30 AM

[19a-235-7] Near-infrared Wideband Luminescence of Mg₄Nb₂O₉:Cr³⁺ Phosphors

〇Yasushi Nanai¹, Ryota Ishida¹, Yuki Urabe¹, Seiya Nishimura¹, Shingo Fuchi¹ (1.Aoyama Gakuin Univ.)

Oral presentation

[19p-235-1~13] 13.8 Optical properties and light-emitting devices

Wed. Sep 19, 2018 1:30 PM - 5:00 PM 235 (3Ｆ_Lounge２)

Yasushi Nanai(Aoyama Univ.), Kenji Shinozaki(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[19p-235-1] ZnS:Cu nanoparticles produced by laser ablation in liquid

〇QIYAN ZHANG¹, MITSUHIRO HONDA¹, YO ICHIKAWA¹, TOSHIFUMI SATOH² (1.NITech., 2.Tokyo Polytechnic Univ.)

1:45 PM - 2:00 PM

[19p-235-2] Efficiency improvement of Sr(Si,Al)₅(O,N)₇:Ce³⁺ by selecting Ce raw material.

〇Yumi Fukuda¹, Keiko Albessard¹, Iwao Mitsuishi¹ (1.Toshiba Corp.)

2:00 PM - 2:15 PM

[19p-235-3] Crystal Structure and Emission Property of A₁₂X₁₃-type New Blue Oxynitride Phosphor

〇Shiro Funahashi¹, Naoto Hirosaki¹, Takashi Takeda¹, Rong-Jun Xie² (1.NIMS, 2.Xiamen Univ.)

2:15 PM - 2:30 PM

▲ [19p-235-4] Powder synthesis and photoluminescence properties of a new yellow-emitting Eu-doped Sr-α-SiAlON phosphor, Sr_1+xSi_28-2xAl_2+2xN₄₀ (x=2)

〇Mehdi ESTILI¹, Rong-Jun Xie², Kohsei Takahashi¹, Lihong Liu¹, Shiro Funahashi¹, Tohru Suzuki¹, Naoto Hirosaki¹ (1.NIMS, 2.Xiamen Univ.)

2:30 PM - 2:45 PM

▲ [19p-235-5] Fabrication of Highly Transparent γ-AlON Ceramics from High Sinterability Powders by Using Spark Plasma Sintering Method and Hot Isostatic Pressing Post-treatment

〇Lihong Liu¹, Chenning Zhang¹, Kohsei Takahashi¹, Toshiyuki Nishimura¹, Hiroyo Segawa¹, Naoto Hirosaki¹, Rong-Jun Xie² (1.NIMS, 2.Xiamen Univ.)

2:45 PM - 3:00 PM

[19p-235-6] Gonio-spectrofluorometric Measurements of Oxynitride Phosphors III

〇Kousei Takahasi¹, Yoshirou Ichino², Yoshihiro Osawa³, Naoto Hirosaki¹ (1.NIMS, 2.AIST, 3.Otsuka Electronics)

3:15 PM - 3:30 PM

[19p-235-7] Photoluminescence properties of ZnO: Eu³⁺, Er³⁺ films

〇Housei Akazawa¹, Shinojima Hiroyuki² (1.NTT DIC, 2.Kurume NCT)

3:30 PM - 3:45 PM

[19p-235-8] Correlation between mechanouminescence and activation energy of trap level in impurity doped stronium aluminate phosphor

〇Kazuma Matsumoto¹, Komaki Naoya¹, Hirakawa Daiki¹, Maeda Kouji¹, Yokoyama Hirosumi¹, Sakai Kentarou² (1.Miyazaki Univ., 2.Cooperative Research Center,Univ.Miyazaki)

3:45 PM - 4:00 PM

[19p-235-9] Luminescence properties of Eu doped SrAl₂O₄ phosphor

〇(M1)Masamori Ohgushi¹, Toshihiro Nakamura¹ (1.Hosei Univ)

4:00 PM - 4:15 PM

[19p-235-10] Dependence of sintering temperature on crystal structure and optical properties for Lu₃Al₅O₁₂: Ce³⁺ phosphors

〇Hiroshi Koizumi^1,4, Junya Watabe², Shin Sugiyama², Hideaki Hirabayashi³, Tetsuya Homma¹ (1.SIT, 2.NML, 3.Toshiba Material, 4.Toshiba CMC)

4:15 PM - 4:30 PM

[19p-235-11] Effect of Al composition in Lu₃Al₅O₁₂: Ce³⁺ phosphors to optical properties

〇Hiroshi Koizumi^1,4, Junya Watabe², Shin Sugiyama², Hideaki Hirabayashi³, Tetsuya Homma¹ (1.SIT, 2.NML, 3.Toshiba Material, 4.Toshiba CMC)

4:30 PM - 4:45 PM

[19p-235-12] Study of Thermal Quenching in Lu₃(Al, Ga)₅O₁₂:Ce by using TRMC Technique (2)

〇Tomotaka Taniguchi¹, Masayoshi Mikami¹, Akinori Saeki² (1.Mitsubishi Chemical, 2.Osaka Univ.)

4:45 PM - 5:00 PM

[19p-235-13] Improved photoluminescence of electrophoretically-deposited Y₂O₃:Bi³⁺,Yb³⁺ nanosheet films by calcination

〇Ryoma Watanabe¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

Oral presentation

[20a-235-1~8] 13.8 Optical properties and light-emitting devices

Thu. Sep 20, 2018 9:30 AM - 11:30 AM 235 (3Ｆ_Lounge２)

Jun Tatebayashi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[20a-235-1] Analysis of photoluminescence properties of the quantum dot using quantum annealing

Hiroto Hakamata¹, 〇Tomah Sogabe^1,2, Koichi Yamaguchi^1,2 (1.UEC, 2.UEC i-PERC)

9:45 AM - 10:00 AM

[20a-235-2] Cascade process of carrier in InGaAs multi stacked quantum dots without strain balancing

〇Keishiro Goshima¹, Inukai Keisuke¹, tsuda norio¹, sugaya takeyoshi² (1.AIT, 2.AIST)

10:00 AM - 10:15 AM

[20a-235-3] Modal gain measurement of high-density InGaAs quantum dots by variable stripe length method

〇Akihisa Ohtake¹, Satoshi Hiura¹, Akihiro Washida¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

10:15 AM - 10:30 AM

[20a-235-4] Relaxation phenomenon of spin ensemble at coupled excited states of InGaAs quantum dots

〇Satoshi Hiura¹, Junichi Takayama¹, Takayuki Kiba², Akihiro Murayama¹ (1.IST, Hokkaido Univ., 2.Kitami Inst. of Technol.)

10:30 AM - 10:45 AM

▲ [20a-235-5] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs

〇Kexiong Zhang¹, H. Yamada¹, N. Kumagai¹, T. Yamada¹, G. W. Cong¹, K. Endo¹, M. Shimizu^1,3, D. Ohori², S. Samukawa², X. L. Wang^1,3 (1.AIST, 2.Tohoku Univ., 3.Nagoya Univ.)

10:45 AM - 11:00 AM

[20a-235-6] Synthesis and Optical Characterization of One-Dimensional Chains linked by DNA-functionalized Quantum-Dots

〇Kosuke Sasano¹, Akira Nishi¹, Masaru Oda¹, Tamotsu Zako² (1.Kyusyu Inst. of Tech., 2.Ehime Univ)

11:00 AM - 11:15 AM

[20a-235-7] Automatic selective measurements of single-dot emission using real-time image analysis

〇Toshiyuki Ihara¹, Atsushi Matsuda¹ (1.NICT)

11:15 AM - 11:30 AM

[20a-235-8] Size Dependent Exciton Dynamics of Halide Perovskite Nanocrystals Revealed by Single Dot Spectroscopy

〇Sojiro Masada¹, Naoki Yarita¹, Hirokazu Tahara¹, Masaki Saruyama¹, Tokuhisa Kawawaki¹, Ryota Sato¹, Toshiharu Teranishi¹, Yoshihiko Kanemitsu¹ (1.ICR, Kyoto Univ.)

Oral presentation

[20p-235-1~15] 13.8 Optical properties and light-emitting devices

Thu. Sep 20, 2018 1:30 PM - 5:30 PM 235 (3Ｆ_Lounge２)

Takashi Kunimoto(Tokushima Bunri Univ.), Haruki Fukada(Kanazawa Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[20p-235-1] Energy band modulation in β-FeSi₂films grown by MOCVD

〇Kensuke Akiyama^1,2, Sakiko Nojima¹, Ryo Takahashi¹, Hiroshi Funakuno² (1.Kanagawa Inst., 2.Tokyo Inst. Tech.)

1:45 PM - 2:00 PM

[20p-235-2] Influence of pH on photoluminescence of L-cysteine-derived carbon dots prepared via a microwave-assisted hydrothermal reaction

〇Taishu Yoshinaga¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:00 PM - 2:15 PM

[20p-235-3] Influence of reaction time on photoluminescence properties of phenylenediamine-derived carbon dots

〇Rina Sato¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:15 PM - 2:30 PM

△ [20p-235-4] Influence of X-ray irradiation on fluorescent properties of Ag-zeolite nanoparticles (II)

〇Kohei Taiji¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:30 PM - 2:45 PM

[20p-235-5] Photobleaching and self-recovery of CsPbBr₃ perovskite quantum dots

〇Koji Kidokoro¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:45 PM - 3:00 PM

[20p-235-6] Preparation and photoluminescence properties of CuInS₂/ZnS core/shell quantum dots for the application in solar cells

〇Yuto Nakamura¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

3:00 PM - 3:15 PM

[20p-235-7] Band-edge emission from AgInS₂/GaS_x core/shell colloidal quantum dots and improvement of optical properties

〇Taro Uematsu¹, Kazutaka Wajima¹, Dharmendar Kumar Sharma², Shuzo Hirata², Takahisa Yamamoto³, Tatsuya Kameyama³, Martin Vacha², Tsukasa Torimoto³, Daisuke Oyamatsu⁴, Susumu Kuwabata¹ (1.Osaka Univ., 2.Tokyo Tech., 3.Nagoya Univ., 4.Nichia Corporation)

3:15 PM - 3:30 PM

[20p-235-8] Study of Hole Transport Materials for Green Light-Emitting Diodes using ZnInGaP/ZnS Quantum Dots

〇Kei Ogura¹, Genichi Motomura¹, Toshimitsu Tsuzuki¹, Yoshihide Fujisaki¹, Junki Nagakubo², Masaaki Hirakawa², Tsutomu Nishihashi² (1.NHK, 2.ULVAC Inc.)

3:45 PM - 4:00 PM

[20p-235-9] Luminescence Properties of Praseodymium Implanted into Micro-Regions in Gallium Nitride

〇Shinichiro Sato¹, Manato Deki², Tohru Nakamura³, Tomoaki Nishimura³, Takeshi Ohshima¹ (1.QST, 2.Nagoya Univ., 3.Hosei Univ.)

4:00 PM - 4:15 PM

[20p-235-10] The influence of co-doped materials on the formation of Eu and Si co-doped AlN thin films by sputtering method

〇(M2)kazusa Morimoto¹, Hiroshi Katumata¹ (1.Meiji Univ.)

4:15 PM - 4:30 PM

△ [20p-235-11] Observation of cavity modes in Er,O-codoped GaAs microdisk resonator

〇Ryoma Higashi¹, Masayuki Ogawa¹, Natsuki Fujioka¹, Taiki Kishina¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

4:30 PM - 4:45 PM

△ [20p-235-12] Fabrication of two-dimensional GaN:Eu plasmonic crystals for enhancement of red light emission

〇Yoji Matsude¹, Tomoya Yamada¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

4:45 PM - 5:00 PM

[20p-235-13] Optimization of p-GaN thickness for surface plasmon effect in Green LED

〇Kengo Yamamoto¹, Dong Han¹, Seiji Ishimoto¹, Ryoya Mano¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.ARC,Nagoya Univ.)

5:00 PM - 5:15 PM

[20p-235-14] Optimization of buffer layer thickness of cerium oxide for non-spin bath host crystal

〇Tomohiro Inaba¹, Xuejun Xu¹, Szuba Wojciech¹, Takehiko Tawara^1,2, Hiroo Omi^1,2, Hideki Yamamoto¹, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)

5:15 PM - 5:30 PM

[20p-235-15] Understanding Room Temperature Optical Activity of Erbium-Oxygen Complex in Silicon

〇Yasuo Shimizu¹, Yuan Tu¹, Ayman Abdelghafar², Yudai Suzuki², Keinan Gi², Takashi Tanii², Takahiro Shinada³, Enrico Prati⁴, Michele Celebrano⁵, Marco Finazzi⁵, Lavinia Ghirardini⁵, Koji Inoue¹, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Waseda Univ., 3.CIES Tohoku Univ., 4.IFN-CNR, 5.Politecnico di Milano)

Poster presentation

[21a-PA3-1~20] 13.8 Optical properties and light-emitting devices

Fri. Sep 21, 2018 9:30 AM - 11:30 AM PA (Event Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[21a-PA3-1] Dependence of structural and luminescent characteristics in ZnO thin films prepared by mist-CVD method on substrate temperrature (２)

〇Yoshiki Saito¹, Shogo Saeki¹, Takeshi Kanno¹, Koshi Nishikawa¹, Kou Takasaki¹, Haruki Fukada¹, Atsushi A. Yamaguchi¹ (1.Kanazawa Institute df Technology)

9:30 AM - 11:30 AM

[21a-PA3-2] Fluence dependence of pulsed laser ablation in liquids for KSrPO₄:Eu, KBaPO₄:Eu phosphor

〇Masaya Tsuta¹, Susumu Nakamura², Ariyuki Kato¹ (1.Nagaoka Univ., 2.Nagaoka Inst.)

9:30 AM - 11:30 AM

[21a-PA3-3] Electron Trap and Release Process for Afterglow in Pr, Al co-doped CaTiO₃ Crystals

〇(M2)Ayaka Igarashi¹, Yasushi Nanai², Hayato Kamioka¹ (1.Nihon Univ., 2.Aoyama Gakuin Univ.)

9:30 AM - 11:30 AM

[21a-PA3-4] Syntheses and evaluation of α-Zn₂SiO₄ thin films

〇Kentaro Matsuzaki¹, Hikaru Saito¹, Satoshi Hata¹, Kosuke Watanabe¹, Miki inada¹ (1.Kyushu Univ.)

9:30 AM - 11:30 AM

[21a-PA3-5] Cooling speed dependence of luminescence properties of Pr³⁺-doped Bi₂O₃-GeO₂ crystals

〇(M2)Kyohei Ishii¹, Yasushi Nanai¹, Shingo Fuchi¹ (1.Aoyama Gakuin Univ.)

9:30 AM - 11:30 AM

▲ [21a-PA3-6] Room Temperature Photo- and Electroluminescence from Ion Implanted Silicon-Germanium

〇(M2C)Nikolay Balakleyskiy¹, Nikolay Gerasimenko¹, Vadim Pirogov¹ (1.National Research Univ. of Electronic Technology)

9:30 AM - 11:30 AM

[21a-PA3-7] Luminescence properties of Cr ion doped Mg₂SiO₄ for NIR wideband light sources

〇(M1)Ryota Ishida¹, Yuki Urabe¹, Seiya Nishimura¹, Yasushi Nanai¹, Shingo Huchi¹ (1.Aoyama gakuin Univ.)

9:30 AM - 11:30 AM

[21a-PA3-8] Nature of Shallow electron traps in CeGAGG crystals

〇Toru Yagihashi¹, Shinta Watanabe², Mamoru Kitaura¹, Kei Kamada³, Shunsuke Kurosawa^1,3, Akimasa Ohnishi¹, Kazuhiko Hara⁴ (1.Yamagata univ., 2.Nagoya univ., 3.Tohoku Univ. NICHe, 4.Shizuoka Univ. RIE)

9:30 AM - 11:30 AM

[21a-PA3-9] Surface modification of quantum dots for quantum-dot light-emitting diodes (QLEDs)

〇(M2)Shunta Nabetani¹, Taro Uematsu¹, Genichi Motomura², Tsuzuki Toshimitsu², Torimoto Tsukasa³, Kuwabata Susumu¹ (1.Osaka Univ., 2.NHK., 3.Nagoya Univ.)

9:30 AM - 11:30 AM

△ [21a-PA3-10] Electronic structure of core/shell quantum dot fluorophore investigated by photoinduced electron transfer

〇Takuya Sasakura¹, Taro Uematsu¹, Tsukasa torimoto², Susumu Kuwabata¹ (1.Osaka Univ., 2.Nagoya Univ.)

9:30 AM - 11:30 AM

[21a-PA3-11] Temperature dependence of spin dynamics at coupled excited states of InGaAs quantum dots

〇Shino Sato¹, Satoshi Hiura², Junichi Takayama², Akihiro Murayama² (1.Faculty of Engineering, Hokkaido Univ., 2.IST, Hokkaido Univ.)

9:30 AM - 11:30 AM

[21a-PA3-12] Fabrication of molybdenum trioxide and core-shell quantum dot thin film by coating method and its application to light emitting diode

〇(M1)Yu Kamada¹, Naoki Ohtani¹ (1.Doushisha Univ.)

9:30 AM - 11:30 AM

[21a-PA3-13] Optical Properties of Colloidal Quantum-Dots Dispersed in Liquid Solution Embedded in a Planar Microcavity

〇Atsushi Arai¹, Takuya Hosokawa¹, Masaru Oda¹, Hisao Kondo² (1.Kyushu Inst.of Tech., 2.Ehime Univ.)

9:30 AM - 11:30 AM

[21a-PA3-14] Crystal growth and evaluation of Ga₂O₃ nanowires

〇Yuki Nakahata¹, Ozaki Shunji¹ (1.Graduate School of Science and Technology, Gunma University)

9:30 AM - 11:30 AM

[21a-PA3-15] Wavelength dependence of permittivity modulation at GaAs surface induced by surface acoustic waves

〇(M1)Tomoki Hiratsuka¹, Naoyuki Yoshida², Hiroyuki Bando¹, Toshio Matsusue¹ (1.Chiba Univ., 2.Chiba Univ. AIS)

9:30 AM - 11:30 AM

[21a-PA3-16] Study on the precious measurement of the nonlinear refractive index in InP thick film using closed aperture Z-scan technique

〇(M2)Soma Nishibe¹, Isana Morita², Masaki Oishi¹, Toshio Matsusue¹, Hiroyuki Bando¹ (1.Chiba Univ., 2.Chiba Univ. Eng.)

9:30 AM - 11:30 AM

[21a-PA3-17] Crystal growth and optical properties of ZnGa₂Se₄ semiconductor

〇Shingo Mukada¹, Shunji Ozaki¹ (1.Gunma Univ.)

9:30 AM - 11:30 AM

[21a-PA3-18] Crystal growth and evaluation of Cu₂GeSe₃ semiconductor

〇Shun Matsumura¹, Shunji Ozaki¹ (1.Gunma Univ.)

9:30 AM - 11:30 AM

[21a-PA3-19] Application of Normalization Procedure for Modulation Spectroscopy in TiO₂

〇Shuhei Shinmura¹, Kobayashi Eiichi¹, Makino Takayuki¹, Ito Seigo² (1.Fukui. Univ., 2.Hyogo Univ.)

9:30 AM - 11:30 AM

[21a-PA3-20] Photoluminescence properties of TlBr crystals for radiation detectors

〇Yuto Yasui¹, Toshiyuki Onodera², Yong-Gu Shim³, Mamedov Nazim⁴ (1.Chiba Inst., 2.Tohoku Inst., 3.Osaka Pref. Univ., 4.Azerbaijan Inst. Physics.)

Sessions

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[19a-235-1~7] 13.8 Optical properties and light-emitting devices

[19p-235-1~13] 13.8 Optical properties and light-emitting devices

▲ [19p-235-4] Powder synthesis and photoluminescence properties of a new yellow-emitting Eu-doped Sr-α-SiAlON phosphor, Sr1+xSi28-2xAl2+2xN40 (x=2)

▲ [19p-235-5] Fabrication of Highly Transparent γ-AlON Ceramics from High Sinterability Powders by Using Spark Plasma Sintering Method and Hot Isostatic Pressing Post-treatment

[20a-235-1~8] 13.8 Optical properties and light-emitting devices

▲ [20a-235-5] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs

[20p-235-1~15] 13.8 Optical properties and light-emitting devices

△ [20p-235-4] Influence of X-ray irradiation on fluorescent properties of Ag-zeolite nanoparticles (II)

△ [20p-235-11] Observation of cavity modes in Er,O-codoped GaAs microdisk resonator

△ [20p-235-12] Fabrication of two-dimensional GaN:Eu plasmonic crystals for enhancement of red light emission

[21a-PA3-1~20] 13.8 Optical properties and light-emitting devices

▲ [21a-PA3-6] Room Temperature Photo- and Electroluminescence from Ion Implanted Silicon-Germanium

△ [21a-PA3-10] Electronic structure of core/shell quantum dot fluorophore investigated by photoinduced electron transfer

Authentication

▲ [19p-235-4] Powder synthesis and photoluminescence properties of a new yellow-emitting Eu-doped Sr-α-SiAlON phosphor, Sr_1+xSi_28-2xAl_2+2xN₄₀ (x=2)