[20p-235-1~15] 13.8 Optical properties and light-emitting devices

[20p-235-9] Luminescence Properties of Praseodymium Implanted into Micro-Regions in Gallium Nitride

〇Shinichiro Sato¹, Manato Deki², Tohru Nakamura³, Tomoaki Nishimura³, Takeshi Ohshima¹ (1.QST, 2.Nagoya Univ., 3.Hosei Univ.)

Keywords:Rare-Earth Doped Gallium Nitride, Confocal Microscope, Photoluminescence

Showing strong photoluminescence and electroluminescence with a narrow linewidth even at room temperature, lanthanide doped in gallium nitride (GaN) can be potentially used for “quantum sensing”, high-sensitivity magnetic field and temperature sensing with high spatial resolution. In this presentation, we will report the luminescence properties of Praseodymium (Pr) implanted into micro-regions in GaN using a confocal laser scanning microscope at room temperature and discuss dependences of the laser power and wavelength.