The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[21a-PA3-1~20] 13.8 Optical properties and light-emitting devices

Fri. Sep 21, 2018 9:30 AM - 11:30 AM PA (Event Hall)

9:30 AM - 11:30 AM

[21a-PA3-4] Syntheses and evaluation of α-Zn2SiO4 thin films

Kentaro Matsuzaki1, Hikaru Saito1, Satoshi Hata1, Kosuke Watanabe1, Miki inada1 (1.Kyushu Univ.)

Keywords:Willemite, Cathodoluminescence, Microscopy

Zn2SiO4 obtained by annealing ZnO on Si3N4.It has been reported that the film is a light emitting film with excellent flatness. It has also been reported that the emission wavelengths of Zn2SiO4 differ depending on the phase. Therefore, in this study, we investigated the dependence of the phase and structure of the formed film on the heat treatment condition for the purpose of controlling the light emission characteristics of Zn2SiO4 film. By subjecting the multilayer thin film to heat treatment at 900 ° C. or higher,it is possible a single color of α phase light emitting thin film can be easily obtained.