The 79th JSAP Autumn Meeting, 2018

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13 Semiconductors » 13.8 Optical properties and light-emitting devices

[19p-235-1~13] 13.8 Optical properties and light-emitting devices

Wed. Sep 19, 2018 1:30 PM - 5:00 PM 235 (3Ｆ_Lounge２)

Yasushi Nanai(Aoyama Univ.), Kenji Shinozaki(AIST)

3:15 PM - 3:30 PM

[19p-235-7] Photoluminescence properties of ZnO: Eu3+, Er3+ films

〇Housei Akazawa1, Shinojima Hiroyuki2 (1.NTT DIC, 2.Kurume NCT)

Keywords:ZnO, Eu3+, Er3+

We investigated PL of ZnO films codoped with Eu3+ and Er3+ ions to clarify which of the ions is preferntially excited and results in emission. It turned out that codoping strongly attenunated emissions from both ions, which is more significant than the normal concentration quenching. Furthermore, there was no condition that both ions exhibit emission.