Effect of BaSi<sub>2</sub> slow deposition on formation of p-type BaSi<sub>2</sub>/n-type crystalline Si heterojunction

Michinobu Fujiwara; Kazuma Takahashi; Yoshihiko Nakagawa; Kazuhiro Gotoh; Yasuyoshi Kurokawa; Takashi Itoh; Noritaka Usami

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 19, 2018 1:45 PM - 6:45 PM 436 (436)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

2:15 PM - 2:30 PM

[19p-436-3] Effect of BaSi₂ slow deposition on formation of p-type BaSi₂/n-type crystalline Si heterojunction

〇(M2)Michinobu Fujiwara¹, Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Takashi Itoh¹, Noritaka Usami¹ (1.Nagoya Univ.)

Keywords:silicide semiconductor, heterojunction solar cells, vacuum thermal evaporation

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Presentation information

[19p-436-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

[19p-436-3] Effect of BaSi2 slow deposition on formation of p-type BaSi2/n-type crystalline Si heterojunction

[19p-436-3] Effect of BaSi₂ slow deposition on formation of p-type BaSi₂/n-type crystalline Si heterojunction