[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

[19p-CE-11] Evaluation of Mg-implanted GaN by cathode luminescence

〇Susumu Saitoh¹, Takahasi Kazuteru¹, Salmon Michael E.², Shingu Kazue¹ (1.Nano Science Corp., 2.EAG Inc.)

Keywords:cathode luminescence, GaN, Ion implantation

Mg implanted GaN is evaluated by cathode luminescence method in cross section to assess depth profile of optical property. CL panchromatic intensity decreases even in samples after annealing. Ratio of yellow luminescence to near band edge luminescence is independent to CL intensity and results consistent depth profile which is correlate to Mg local concentration obtained by SIMS. It means YL/NBE is useful to indicate local status of GaN crystal effectively.