[19p-CE-5~17] 13.7 Compound and power electron devices and process technology

[19p-CE-12] Mg/N co-implantation and ultra-high pressure N₂ thermal activation process for p-doping into GaN

〇Hideki Sakurai^1,2,3, Shinji Yamada^1,2,3, Masato Omori¹, Yukihiro Furukawa³, Hideo Suzuki³, Michal Bockowski^1,4, Jun Suda^1,2, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET, 4.UNIPRESS)

Keywords:GaN, Ion implantaion, high pressure anneal