[19p-CE-1~4] 日韓ジョイントシンポ：ワイドバンドギャップ半導体デバイス

▲ [19p-CE-4] Recessed-gate AlGaN/GaN High Electron Mobility Transistors (HEMTs) Prepared by Photo-electrochemical Etching and Post-metallization Annealing

〇Keisuke Uemura¹、Manato Deki²、Yoshio Honda²、Hiroshi Amano²、Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.、2.IMaSS, Nagoya Univ.)

キーワード：nitride semiconductor, electrochemistry, PMA

Up to the present, the device processing technology has been widely investigated on AlGaN/GaN HEMTs for the improvement of their performance and reliability. In this study, the low-damage photo-electrochemical (PEC) process was optimized for the formation of recessed-gate AlGaN/GaN HEMTs. Furthermore, the effect of the post-metallization-annealing (PMA) process was investigated for the improvement of gate controllability.