[19p-PA3-1~9] 3.15 Silicon photonics

[19p-PA3-2] Annealing time dependence on void occupancy of directly-bonded InP/Si substrate (2)

〇(M2)Natsuki Hayasaka¹, Xu Han¹, Gandhi Kallarasan Periyanayagam¹, Masaki Aikawa¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Masaki Matsuura¹, Hiromu Yada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:Semiconductor laser, InP/Si, directly-bonded