[19p-PA4-1~27] 15.4 III-V-group nitride crystals

[19p-PA4-11] p- and n-GaN Growth on Expanded Natural Graphite Sheet

〇Takashi Inoue¹, Go Sajiki², Toshihiro Hosokawa¹, Akiyoshi Takeda¹, Hiroshi Okano² (1.Toyo Tanso Co., Ltd., 2.NIT, Kagawa College)

Keywords:GaN, Graphite sheet, p-type

We are developing a flexible GaN light-emitting device on expanded natural graphite sheet PERMA-FOIL^®. We have obtained PL-emitting GaN and optimized the growth conditions.In the present study, p- and n-GaN were grown on PERMA-FOIL^® to make a pn junction device. We will also show detail on PL spectra and GaN morphology and discuss them.