[19p-PB7-1~7] 15.5 Group IV crystals and alloys

[19p-PB7-3] Mobility evaluation of tensile-strained Si/relaxed SiGe/Si(110) heterostructures using gate-voltage-applied Hall measurement

〇(M1)Daichi Namiuchi¹, Kei Sato¹, Kentarou Sawano², Keisuke Arimoto¹, Jyunji Yamanaka¹, Kosuke O. Hara¹, Kiyokazu Nakagawa¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

Keywords:semiconductor, strained Si, pMOSFET

In order to realize high performance and low power consumption of the CMOS device, it is necessary to improve the hole mobility.The tensile strained Si having the (110) plane on its surface has the calculation result that the hole effective mass can be reduced to less than half of the unstrained Si.In this study, Hall measurement was carried out under applied gate voltage using Hall Bar with gate electrode, and evaluation of hole mobility was attempted.Since Hall measurement does not use CV measurement and being a “four probe measurement”, there is an advantage that carrier mobility and density can be evaluated without being influenced by parasitic capacitance and contact resistance.