[20a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[20a-141-12] Effects of surface etching with CF₄ on 4H-SiC nMOSFETs

〇Kiichi Kobayakawa¹, Kosuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Shin-Ichiro Kuroki¹ (1.RNBS., 2.Phenitec Smicon. Co.)

Keywords:4H-SiC, Dry etching, Dry oxidation