[20a-234A-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-234A-1] High-Hall-mobility amorphous tin-doped In₂O₃ films of thicknesses of less than 50 nm

〇Yutaka Furubayashi¹, Hisashi Kitami^1,2, Toshiyuki Sakemi², Kimio Kinoshita², Makoto Maehara², Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd.)

Keywords:Transparent conducting oxides, Indium oxides, Mobility

Sn-doped In₂O₃ (ITO) has been mainly applied to transparent conducting films with a high optical transparency and an electrical conductivity, alghrough it has resource problems. Actually In₂O₃-related films have a high Hall mobility. But, in most of reports, the films needed a large thickness (more than 100 nm) or were grown at a high temperature. On the other hand, there were few reports on thin films (less than 50 nm) grown at a low temperature. We report that amorphus ITO films of a thickness of less than 40 nm have a large Hall mobility of 54 cm²/Vs, by using a reactive plasma deposition method.