Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-234A-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 20, 2018 9:00 AM - 12:00 PM 234A (234-1)

Takashi Yasuda(Ishinomaki Senshu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-234A-1] High-Hall-mobility amorphous tin-doped In₂O₃ films of thicknesses of less than 50 nm

〇Yutaka Furubayashi¹, Hisashi Kitami^1,2, Toshiyuki Sakemi², Kimio Kinoshita², Makoto Maehara², Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd.)

9:15 AM - 9:30 AM

[20a-234A-2] Anomalous carrier transport of tin-doped In₂O₃ thin films irradiated with negative oxygen ions

〇Yutaka Furubayashi¹, Hisashi Kitami^1,2, Toshiyuki Sakemi², Kimio Kinoshita², Makoto Maehara², Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd.)

9:30 AM - 9:45 AM

[20a-234A-3] Electrical and optical properties of ATO thin films fabricated by mist CVD

〇(M1)Mariko Ueda¹, Li Liu¹, Shota Sato¹, Giang Dang², Toshiyuki Kawaharamura^1,2, Fujita Shizuo³, Hiroyuki Orita⁴, Takahiro Hiramatsu⁴ (1.School of Intelligent. Mech. Sys. Eng., Kochi Univ. of Tech., 2.Res.Inst., Kochi Univ. of Tech., 3.Kyoto Univ., 4.Toshiba Mitsubishi-Electric Industrial Systems)

9:45 AM - 10:00 AM

[20a-234A-4] Growth and characterization of AlTiO insulating films by mist CVD method

〇Kousi Nisiyama¹, Kazuki Nisimura¹, Takaaki Tsuda¹, Qiang Yin², Zenji Yatabe³, Kouji Sue², Yusui Nakamura^4,5 (1.GSST, Kumamoto Univ., 2.Fac. of Eng. Kumamoto Univ., 3.POIE Kumamoto Univ., 4.FAST, Kumamoto Univ., 5.Phoenics)

10:00 AM - 10:15 AM

[20a-234A-5] Low Temperature Formation of ZnO Films by Plasma-Assisted Mist-CVD

〇Tomotaka Kido¹, Tomoki Mikuriya¹, Rena Sugino¹, Yasutaka Nisi², Makoto Nakazumi², Koichiro Iwahori², Zenji Yatabe^1,3, Takao Namihira^1,4, Yusui Nakamura^1,5,6 (1.GSST Kumamoto Univ., 2.Nikon Corporation, 3.POIE Kumamoto Univ., 4.IPPS Kumamoto Univ., 5.FAST Kumamoto Univ., 6.Phoenics)

10:15 AM - 10:30 AM

[20a-234A-6] Improvement of crystallinity of two types of non-polar ZnO thin films on sapphire substrate formed by mist-CVD

〇Yudai Tanaka¹, Hironobu Tanoue¹, Yuki Nagao¹, Takumi Furukawa¹, Shoji Nagaoka^3,4, Zenji Yatabe^1,2, Yusui Nakamura^1,4 (1.GSST Kumamoto Univ., 2.POIE Kumamoto Univ., 3.Kumamoto IRI, 4.Phoenics)

10:45 AM - 11:00 AM

[20a-234A-7] Anisotropic growth of ZnO nanocrystal in chemical bath synthesis: growth mode control by selective growth window for its electrical uniformity

〇Kentaro Watanabe¹ (1.Tohoku Univ.)

11:00 AM - 11:15 AM

[20a-234A-8] 【Highlighted Presentation】Development of ultraviolet optical modulator using non-polar ZnO/ZnMgO multiple quantum wells (II)

〇Tomoki Abe¹, Shohei Iwagashita¹, Daiki Kimura¹, Hirofumi Kasada¹, Koshi Ando¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ.)

11:15 AM - 11:30 AM

[20a-234A-9] The origin and properties of SRH-type nonradiative recombination centers in ZnO

〇Shigefusa Chichibu¹, Kazunobu Kojima¹, Kazuto Koike², Mitsuaki Yano², Shun-ichi Gonda³, Shoji Ishibashi⁴, Akira Uedono⁵ (1.IMRAM, Tohoku Univ., 2.Osaka Inst. Tech., 3.ISIR, Osaka Univ, 4.CD-FMat, AIST, 5.Univ. of Tsukuba)

11:30 AM - 11:45 AM

[20a-234A-10] Fabrication of rock-salt structured MgZnO/MgO layered structures showing DUV emissions

〇Kyohei Ishii¹, Mizuki Ono², Takeyoshi Onuma², Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ., 2.Kogakuin Univ.)

11:45 AM - 12:00 PM

[20a-234A-11] Random lasing from ZnO aggregate microparticles

〇(M1)Ryosuke Komatsu¹, Noriko Saito², Taisei Yamamoto^3,4, Toshihiro Nakamura¹ (1.Hosei Univ, 2.NIMS, 3.Osaka Univ, 4.Hakusui Tech)

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