Yutaka Furubayashi

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Speaker, Author, Co-Author

Thu. Sep 20, 2018 9:00 AM - 12:00 PM 234A (234-1)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-234A-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:00 AM - 9:15 AM

[20a-234A-1] High-Hall-mobility amorphous tin-doped In₂O₃ films of thicknesses of less than 50 nm

〇Yutaka Furubayashi¹, Hisashi Kitami^1,2, Toshiyuki Sakemi², Kimio Kinoshita², Makoto Maehara², Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd.)

9:15 AM - 9:30 AM

[20a-234A-2] Anomalous carrier transport of tin-doped In₂O₃ thin films irradiated with negative oxygen ions

〇Yutaka Furubayashi¹, Hisashi Kitami^1,2, Toshiyuki Sakemi², Kimio Kinoshita², Makoto Maehara², Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, Ltd.)

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