[20a-331-1~13] 13.7 Compound and power electron devices and process technology

[20a-331-4] Traps related to carbon in MOVPE p-GaN on GaN substrate

〇(M2)Tatsuya Kogiso¹, Hikaru Yoshida¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

Keywords:DLTS, p-GaN

We have studied traps in p-GaN with low-frequency capacitance DLTS measurements. Hole traps labeled H_a (0.29 eV), H_b (0.33 eV), H_c (0.46 eV), H_d (0.88 eV), H_e (1.0 eV) and H_f (1.3 eV) are observed in the measurement temperature range from 100K to 550K. It is found that H_a and H_d trap concentrations are higher in the sample with higher carbon concentration. Therefore, it is suggested that traps H_a (E_v+0.29 eV) and H_d (E_v+0.88 eV) are carbon-related.