[20a-331-1~13] 13.7 Compound and power electron devices and process technology

[20a-331-5] Effect of wafer off-angles on defect formation in drift layers grown on freestanding GaN substrates

〇Kenji Shiojima¹, Tomohiro Sagawa¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

Keywords:GaN, Wafer off-angle, DLTS

We characterized the effect of surface off-angle on deep-level-defect formation by DLTS method. For both a- and m-axes directions, we found E3 defect increase and carrier-concentration decrease in the low off-angle region.