The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

8 Plasma Electronics » 8.3 Plasma nanotechnology

[20a-437-1~11] 8.3 Plasma nanotechnology

Thu. Sep 20, 2018 9:00 AM - 12:00 PM 437 (437)

Akihisa Ogino(Shizuoka Univ.)

11:00 AM - 11:15 AM

[20a-437-8] Effects of precursors and catalysts on the plasma CVD synthesis of boron nitride

Tatsuya Shiratori1, Takuya Takami1, Takuya Miura1, Takashi Yanase2, Taro Nagahama2, Yasunori Yamamoto2, Toshihiro Shimada2 (1.CSE Hokkaido Univ., 2.Eng. Hokkaido Univ.)

Keywords:boron nitride, plasma CVD

Boron nitride has h-BN, c-BN and the like which take graphite and diamond analog structures. In addition, synthesis of boron nitride nanotubes having a structure similar to that of carbon nanotubes has also been carried out, and applications are expected from properties such as excellent thermal conductivity and insulation properties. We focused on plasma CVD which can easily activate raw material gas, attempted synthesis of BN by plasma CVD using relatively safe borazine compound as a raw material, and searched for nanotube growth catalyst.