[20a-438-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-438-2] Dependence of the plasma and substrate distances on the sputtering growth of GaN

〇Atsushi Tanide^1,3, Motohiro Kohno^1,3, Shigeru Takatsuji¹, Akira Horikoshi^1,3, Shohei Nakamura¹, Kazuo Kinose¹, Soichi Nadahara¹, Masazumi Nishikawa², Akinori Ebe², Kenji Ishikawa³, Masaru Hori³ (1.SCREEN Holdings, 2.EMD Corp., 3.Nagoya Univ.)

Keywords:GaN, deposition, sputtering

High crystalline and low cost deposition methods for GaN are now required to put the devices into practical use. In previous reports, we suggested a new sputtering deposition system that could control the supply of gallium and nitrogen precursors separately to achieve them. Since the improvements of crystalline and flatness were confirmed by closing the distances between plasma and substrates, the results will be introduced in the presentation.