[20a-CE-1~12] 13.5 Semiconductor devices and related technologies

[20a-CE-1] Physical Modeling for Fluctuation of Grain-Boundary Resistance in Polycrystalline Silicon

〇Michiru Hogyoku¹, Takashi Izumida¹, Hiroyoshi Tanimoto¹, Nobutoshi Aoki¹, Seiji Onoue¹ (1.Toshiba Memory Corp.)

Keywords:poly-Si, resistance fluctuation, trap-assisted tunneling

Utilizing the trap-assisted tunneling model that can reproduce the grain-boundary(GB)-limited carrier mobility with negative temperature dependence, we have calculated fluctuation of the GB resistance in polycrystalline silicon. Near a threshold voltage condition, current fluctuation per one GB, corresponding to ±3σ, has been estimated to be one order magnitude, which is substantially larger than that for a single crystal.