11:15 AM - 11:30 AM
[20a-CE-9] Sensitivity Characteristics of GaAsSb/InAs Nanowire Backward Diodes at 2.4 GHz
Keywords:Nanowire, Backward diode, Sensitivity
Ambient RF energy harvesting is an attractive method of supplying alternative power to drive sensors for the internet of things (IoT). In this work, for the first time, we report the microwave sensitivity of p-GaAsSb/n-InAs nanowire backward diodes. Sensitivity of 25 kV/W was obtained for the 96-NW-array diode at 2.4 GHz.